Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al0.25Ga0.75N/GaN Quantum Point Contacts
نویسندگان
چکیده
Magnetic transport spectroscopy is investigated in quantum point contacts (QPCs) fabricated in Al0.25Ga0.75N/GaN heterostructures. The magnetic field perpendicular to the two-dimensional electron gas (2DEG) is shown to depopulate the quasi-one-dimensional energy levels in the first two-dimensional (2D) subband faster than those in the second one. In GaN based heterostructures, the energy levels in the second 2D subband is generally concealed in the fast course of depletion and hence rarely detected. The perpendicular magnetic field facilitates the observation of the second 2D subband, and provides a method to study the properties of these energy levels. A careful analysis on the rate of the magnetic depletion with respect to the level index and confinement is carried out, from which the profile of the lateral confinement in GaN based QPCs is found to be triangular. The stability diagram at T shows the energy separation between the first and second 2D subband to be in the range of 32 to 42 meV.
منابع مشابه
Magneto-ballistic transport in GaN nanowires
Articles you may be interested in Magneto transport in crossed electric and magnetic fields in compensated bulk GaN Weak anti-localization of the two-dimensional electron gas in modulation-doped Al x Ga 1 − x N ∕ GaN heterostructures with two subbands occupation Appl.
متن کاملQuantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls
The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...
متن کاملAnalysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy
Temperature-dependent current-voltage measurements combined with conductive atomic force microscopy and analytical modeling have been used to assess possible mechanisms of reverse-bias leakage current flow in Schottky diodes fabricated from GaN and Al0.25Ga0.75N/GaN structures grown by molecular-beam epitaxy. Below 150 K, leakage current is nearly independent of temperature, indicating that con...
متن کاملWhen the classical & quantum mechanical considerations hint to a single point; a microscopic particle in a one dimensional box with two infinite walls and a linear potential inside it
In this paper we have solved analytically the Schrödinger equation for a microscopic particle in a one-dimensional box with two infinite walls, which the potential function inside it, has a linear form. Based on the solutions of this special quantum mechanical system, we have shown that as the quantum number approaches infinity the expectation values of microscopic particle position and square ...
متن کاملPerturbative Approach to Calculating the Correlation Function of bi-isotropic Metamaterials
A bi-isotropic magneto-electric metamaterials is modeled by two independent reservoirs. The reservoirs contain a continuum of three dimensional harmonic oscillators, which describe polarizability and magnetizability of the medium. The paper aimed to investigate the effect of electromagnetic field on bi-isotropic. Starting with a total Lagrangian and using Euler-Lagrange equation, researcher cou...
متن کامل